| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| OL5201N-25 OL5201N_25_5204N_25 OL5204N-25 |
PT 3C 3#20 SKT RECP
1.55 m High-Power Laser-Diode DIP Module
From old datasheet system
1.55 um High-Power Laser-Diode DIP Module
1.55 レm High-Power Laser-Diode DIP Module
1.55 μm High-Power Laser-Diode DIP Module
|
OKI electronic components
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| ATR0842 |
4-channel LVDS Laser Diode Driver with High Voltage Output for Blue Laser
|
Atmel
|
| EL2223 EL2223C EL2223J EL2223CJ EL2223L/883B EL222 |
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-SOIC
Laser Diode Driver with Waveform Generator; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-TSSOP
High Speed Operational Amplifier
Dual, 500 MHz High Speed, Operational Amplifier
|
Elantec Semiconductor
|
| OL3200N-5 OL3200N_5 |
1.3 μm High-Power Laser-Diode DIP Module
1.3 m High-Power Laser-Diode DIP Module
1.3 um High-Power Laser-Diode DIP Module
From old datasheet system
1.3 レm High-Power Laser-Diode DIP Module
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| TTB200T TTB200S TTB150T TTB150D |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|285V V(BO) MAX|200MA I(S)|TO-220AC
SINGLE BIDIRECTIONAL BREAKOVER DIODE|285V V(BO) MAX|200MA I(S)|DO-214AB
SINGLE BIDIRECTIONAL BREAKOVER DIODE|235V V(BO) MAX|200MA I(S)|TO-220AC
SINGLE BIDIRECTIONAL BREAKOVER DIODE|235V V(BO) MAX|200MA I(S)|DO-15 单双向击穿二极管| 235V五（公报）最大| 200mA的我（县）|的DO - 15
|
ITT, Corp.
|
| NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
